AO7415 20v p-channel mosfet general description product summary v ds -20v i d (at v gs =-10v) -2a r ds(on) (at v gs = -10v) < 100m w r ds(on) (at v gs = -4.5v) < 125m w r ds(on) (at v gs = -2.5v) < 170m w typical esd protection hbm class 2 symbol v ds drain-source voltage -20 the AO7415 uses advanced trench technology to provi de excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable fo r use as a load switch applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted s g d sc-70-6 (sot-323) top view g d d s d d 12 3 65 4 v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl -55 to 150 c thermal characteristics power dissipation b p d t a =25c w 0.63 0.4 t a =70c c/w r q ja 160 180 200 maximum junction-to-ambient a units v 12 gate-source voltage drain-source voltage -20 a i d -2 -1.6 v -13 t a =25c t a =70c pulsed drain current c continuous drain current maximum junction-to-lead junction and storage temperature range parameter typ max c/w c/w maximum junction-to-ambient a d 130 220 160 rev 3: nov 2011 www.aosmd.com page 1 of 5
AO7415 symbol min typ max units bv dss -20 v v ds =-20v, v gs =0v -1 t j =55c -5 i gss 10 m a v gs(th) gate threshold voltage -0.5 -0.85 -1.2 v i d(on) -13 a 80 100 t j =125c 115 98 125 m w 130 170 m w g fs 5 s v sd -0.76 -1 v i s -1 a c iss 250 325 400 pf c oss 40 63 85 pf c rss 22 37 52 pf r g 11.2 17 w q g 3.2 4.5 nc q gs 0.6 nc q gd 0.9 nc t d(on) 11 ns t 5.5 ns turn-on rise time gate drain charge turn-on delaytime total gate charge v gs =-4.5v, v ds =-10v, i d =-2a gate source charge reverse transfer capacitance v gs =0v, v ds =-10v, f=1mhz switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz m w static drain-source on-resistance maximum body-diode continuous current input capacitance output capacitance dynamic parameters r ds(on) i dss m a v ds =v gs , i d =-250 ma v ds =0v, v gs = 12v zero gate voltage drain current gate-body leakage current drain-source breakdown voltage on state drain current i s =-1a,v gs =0v v ds =-5v, i d =-2a v gs =-2.5v, i d =-1.0a i d =-250 m a, v gs =0v v =-10v, v =-10v, r =5 w , electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions diode forward voltage forward transconductance v gs =-4.5v, v ds =-5v v gs =-10v, i d =-2a v gs =-4.5v, i d =-1.3a t r 5.5 ns t d(off) 22 ns t f 8 ns t rr 6.1 ns q rr 1.4 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =-2a, di/dt=100a/ m s turn-on rise time turn-off delaytime i f =-2a, di/dt=100a/ m s turn-off fall time body diode reverse recovery time v gs =-10v, v ds =-10v, r l =5 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedance which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 3: nov 2011 www.aosmd.com page 2 of 5
AO7415 typical electrical and thermal characteristics 0 2 4 6 8 10 0 1 2 3 4 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 60 80 100 120 140 160 180 0 1 2 3 4 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) 25 c 125 c v ds =-5v v gs =-2.5v v gs =-10v 0 5 10 15 20 25 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-1.5v - 4v - 10v -2.5v -3.5v -9v -8v -7v -6v -3v -2v -5v v gs =-4.5v i d =-1a, v gs =-2.5v i d =-1.3a, v gs =-4.5v i d =-2a, v gs =-10v voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 60 100 140 180 220 260 300 340 0 2 4 6 8 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-2a 25 c 125 c rev 3: nov 2011 www.aosmd.com page 3 of 5
AO7415 typical electrical and thermal characteristics 0 1 2 3 4 5 0 1 2 3 4 5 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 150 300 450 600 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-10v i d =-2a 0.1 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 100ms t j(max) =150 c t a =25 c operating area (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =220 c/w t on t p d rev 3: nov 2011 www.aosmd.com page 4 of 5
AO7415 ao7413 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v d u t l v gs isd d iode r e covery te st c ircuit & w aveform s vds - v ds + di/dt rr q = - idt t rr -isd f -i v dc d u t v dd vgs v ds v gs r l r g resistive switching test circuit & w aveform s - + vgs v ds t t t t t t 90% 10% r o n d(o ff) f o ff d(o n) ig v gs - + v d c isd di/dt r m v dd v dd -vds -i rev 3: nov 2011 www.aosmd.com page 5 of 5
|
